PART |
Description |
Maker |
FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp. STMicroelectronics N.V. MICROSEMI CORP
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
AP18P10GH AP18P10GJ |
12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ADVANCED POWER ELECTRONICS CORP Advanced Power Electronics Corp.
|
IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET 8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET 27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET 2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET 3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
APT10M11JVRU3 |
142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP BUCK CHOPPER MOSFET POWER MODULE
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
IRFW540 IRFW540A IRFI540A IRFWI540A IRFW540ATM |
Advanced Power MOSFET 28 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 100V N-Channel A-FET N-CHANNEL POWER MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FS5UMH-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
Powerex, Inc. Powerex Power Semiconductors
|
IXTN61N50 IXTT75N10 IXTH67N10 IXTH75N10 IXTM67N10 |
MegaMOS FET 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA High Current Power MOSFET
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRLL110 IRLL110TR |
1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
|
IRF[International Rectifier]
|
FS5KMH-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc. Powerex Power Semiconductors
|
PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
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